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Aluminum Nitride Substrate Information Links
Key properties of Aluminum Nitride as an insulating substrate for heat sinks and thin and thick film microelectronic applications are: high thermal conductivity, nontoxic, thermal expansion close to that of Silicon and good dielectric properties.
Aluminum Nitride links for technical information, supplier lists, and material properties:
Typical Properties of Aluminum Nitride Substrates
| Toxicity |
Nontoxic |
| Density |
3.3 g/cm³ |
| Hardness (knoop) |
11.8 GPa |
| Moh’s Hardness |
7 at 20°C |
| Flexure Strength |
290 MPa |
| Modulus of Elasticity |
331 GPa |
| Poisson’s Ratio |
0.22 |
| Thermal Conductivity |
175 W/mk |
| Coefficient of Expansion |
4.6 x 10E-6 (20 – 400°C) |
| Maximum Use Temperature |
800°C Oxidizing |
| Dielectric Constant |
20°C 8.9 at 1MHz |
| Dielectric Loss at 1MHz |
20°C 0.0001 – 0.001 |
| Resistivity |
>10E14 ohm-cm |