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High Purity and Resistivity NTD Silicon
Phosphorous Doped Silicon by Neutron Radiation
N-type phosphorous doped Silicon by neutron radiation was invented by Topsil in 1974. In this NTD (neutron transmutation doping) process, Silicon atoms are transformed into phosphorous atoms.
By adjusting the level of neutron radiation, material resistivity can be altered without introducing external dopants and therefore guaranteeing material purity. This NTD type Float Zone Silicon is available in <1-1-1> and <1-0-0> orientations as ingots and polished wafers.
Sample Listing of Polished NTD Silicon From Stock
| 3 inch Diameter Polished One Side |
| Lot No. |
Resistivity (ohm-cm) |
Thickness micron |
Quantity |
| 2792-111-N |
28-47 |
279 |
90 |
| 2793-111-N |
28-44 |
279 |
2 |
| 6001-111-N |
135-165 |
600 |
150 |
| 100 mm Diameter Polished One Side |
| 5002-111-N |
94-116 |
500 |
185 |
| 7302-111-N |
180-220 |
730 |
250 |
| 7502-111-N |
500-600 |
750 |
483 |
Please note: this is a sample listing of wafers in stock. In stock FZ Silicon in various forms for fast delivery.