Sapphire related services include, Sapphire wafer back-thinning, edge grinding, edge rounding, diameter reduction, hole drilling, chamfering, blending and polishing, v-grooves, surface pyramid structures, laser slag removal, slots and steps.
| Name | Orientation |
| C-Plane (0 Degree) | 0001 |
| R-Plane | 1-102 |
| A-Plane (Perpendicular to C) | 11-20 |
| M-Plane (Perpendicular to C and A) | |
| Mechanical Properties | |
| Density at 20°C | 3.98 g/cm3 |
| Hardness | Knoop: 1500 Mohs: 9 |
| Tensile Strength | 275 – 400 MPa 40,000 – 58,000 psi |
| Flexural Strength | 480 – 895 MPa 70,000 – 130,000 psi |
| Compression Strength (ultimate) | 2.0 GPa / 300,000 psi |
| Young’s Modulus (elasticity) | 345 GPa / 50 x 106 psi |
| Bulk Modulus (compression) | 250 GPa / 36 x 106 psi |
| Shear Modulus (rigidity) | 145 GPa / 21 x 106 psi |
| Modulus of Rupture | 350 – 690 MPa / 50,000 – 100,000 psi |
| Poisson’s Ratio | .29 |
| Melting Point | 2040°C / 3700°F / 2310 K |
| Thermal Properties | |
| Thermal Conductivity: | |
| Perpendicular to C | at 23°C: 23.0 W/m°C at 77°C: 16.8 W/m°C |
| Parallel to C | at 24°C: 25.8 W/m°C at 70°C: 17.35 W/m°C |
| Specific Heat | at 18°C: 756 J/kg°C at -182°C: 104 J/kg°C |
| Electrical Properties | |
| Volume Resistivity | at 25°C 1014 ohm/cm |
| Dielectric Strength | 4.8 x 105 |
| Dielectric Constant: | |
| Perpendicular to C | 9.4 |
| Parallel to C | 11.5 |
| Dissipation Factor | 10-4tan δ |
| CTE (Coefficient of Thermal Expansion), x 106/ °C |
||
| Temp °C | Perpendicular to C | Parallel to C |
| 70 | 6.95 | 5.90 |
| 100 | 7.08 | 6.05 |
| 200 | 7.66 | 6.60 |
| 300 | 8.30 | 7.32 |
| 400 | 9.00 | 8.07 |
| 500 | 9.63 | 8.88 |
| 600 | 10.45 | 9.77 |
Phoenix Park Business Center
2 Shaker Road, Bldg. E-001
Shirley, MA 01464
Email: info@valleydesign.com
Phone: 978.425.3030
Fax: 978.425.3031
Email: info@valleydesign.com
Phone: 831.420.0595
Fax: 831.420.0592
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